Engineered for sub-nanosecond dynamic response, ultra-low ripple, and continuous megawatt-scale reliability across Swiss R&D laboratories and ATE test cells.
The global transition from silicon-based power MOSFETs to Gallium Nitride (GaN) and Silicon Carbide (SiC) wide-bandgap (WBG) semiconductors represents a fundamental leap in power density, thermal performance, and switching frequency. In high-precision industrial sectors—such as Switzerland's renowned micro-engineering clusters in Neuchâtel, aerospace R&D in Lausanne, and quantum computing infrastructure in Zurich—the characterization of GaN power stages requires a new paradigm of test instrumentation.
Information Gain Insight: Traditional DC power supplies and electronic loads suffer from high parasitic output capacitance ($C_{oss}$) and slow loop dynamic bandwidth. When testing high dv/dt ($>100\,\text{V/ns}$) and high di/dt ($>5000\,\text{A/\mu s}$) GaN switching circuits, conventional test equipment introduces ringing, false over-current trips, and inaccurate dynamic $R_{DS(\text{on})}$ readings. Our current-fed DC architecture paired with linear MOSFET active loads solves this bottleneck.
Gallium Nitride High Electron Mobility Transistors (HEMTs) exhibit unique physical phenomena, most notably electron trapping under high off-state drain-to-source bias. When a GaN HEMT switches from a high off-state voltage (e.g., 650V) to an on-state condition, trapped charge carriers near the AlGaN/GaN heterojunction restrict channel conductance, transiently elevating the effective $R_{DS(\text{on})}$. Measuring this dynamic degradation requires sub-microsecond pulse timing and stiff, low-inductance bus capacitor decoupling.
Our specialized GaN testing systems incorporate high-speed double-pulse test (DPT) power stages featuring integrated ultra-fast blocking diodes and low parasitic busbar geometry. By controlling gate drive timing with picosecond accuracy, engineers at Swiss research facilities (such as EPFL, ETH Zurich, and PSI) can precisely isolate switching losses ($E_{\text{on}}$, $E_{\text{off}}$), reverse recovery characteristics ($Q_{rr}$), and time-resolved dynamic $R_{DS(\text{on})}$ decay curves.
In high-power industrial and automotive inverter testing, power supply stability during load transients is non-negotiable. Standard voltage-fed power supplies rely on massive capacitive output banks. Should a GaN switch experience shoot-through during gate-drive tuning, the energy stored in these capacitors discharges instantly into the device under test (DUT), resulting in catastrophic device destruction and bond-wire vaporisation.
| Performance Parameter | Standard Voltage-Fed DC Supply | Our Current-Fed GaN Test DC Platform | Impact on Swiss R&D Labs |
|---|---|---|---|
| Energy Storage Medium | Large Output Capacitors | High-Frequency Inductor Link | Prevents catastrophic DUT destruction during gate faults |
| Short-Circuit Fault Current | Extreme Surge Peak (>2000A) | Naturally Limited by Inductor | Preserves semiconductor die for failure root-cause analysis |
| Switching Noise Immunity | Prone to capacitive coupling EMI | Isolated inductive decoupling stage | Essential for sensitive Swiss micro-sensor & bio-med labs |
| Power Envelope | Fixed Peak Point | Wide Constant-Power Window | One unit covers 100V–1000V operational test matrices |
While switch-mode electronic loads offer high power density, their internal PWM switching injects significant high-frequency noise into the measurement circuit, masking subtle GaN conduction harmonics. Our MagnaLOAD ALx linear MOSFET load architecture eliminates switching noise entirely. Operating entirely in the linear region of active silicon devices, it delivers sub-microsecond transient response with absolute zero-phase lag—making it the ideal sink for characterizing high-efficiency micro-inverters, Swiss luxury horology precision power units, and aerospace DC-DC converters.
Customized power testing paradigms aligned with the unique engineering mandates of the Swiss Confederation—from Bern to Geneva.
Swiss MedTech manufacturers developing surgical robotics and implantable diagnostic tools demand ultra-compact GaN power converters. Our high-precision coin-cell and low-power simulators deliver sub-microamp current resolution, enabling verification of power efficiency, thermal dissipation, and battery endurance under micro-dynamic pulsed loads.
Unmanned aerial vehicles (UAVs) developed in the Lake Geneva "Drone Valley" rely on lightweight 800V GaN speed controllers. Our high-dynamic battery simulators (150kW–1000kW) emulate real-world regenerative braking surges, steep climb current draws, and cell unbalance scenarios with microsecond-level hardware-in-the-loop (HIL) accuracy.
At CERN and adjacent particle physics research laboratories, superconducting magnets require sub-ppm current stability and dynamic protection against sudden quenching. Our current-fed DC supplies provide rock-solid current regulation with zero zero-crossing distortion, protecting multi-million-franc research magnet assemblies.
Swiss CleanTech initiatives under "Energy Strategy 2050" prioritize high-frequency Alpine solar micro-inverters and small-scale hydroelectric power conditioning. Our programmable DC supplies incorporate Photovoltaic Power Profile Emulation (PPPE), reproducing rapid shading transients, extreme temperature swings, and EN 50530 MPPT efficiency compliance checks.
In-depth alignment with Swiss Federal Institute of Metrology (METAS), CE standards, and Central European electrification mandates.
Swiss engineering buyers prioritize long-term recalibration stability. Our testing systems ship with full NIST/ISO/IEC 17025 traceable calibration credentials, guaranteeing seamless audit acceptance by METAS and independent Swiss testing bodies.
Switzerland’s rapid adoption of electric mobility and high-power charging infrastructure along the A1/A2 highway corridors demands test gear capable of continuous 1000V DC operation. Our modular rack architecture scales seamlessly to accommodate future voltage hikes.
Built for demanding European laboratory environments, our GaN testers and simulators include redundant hardware interlocks, over-voltage/over-current latching protections, and emergency stop interfaces designed to comply with stringent Swiss occupational safety laws.
Combining four decades of US power electronics manufacturing prowess with dedicated European logistics and technical export support.
Unlike virtual manufacturers who outsource assembly, every transformer winding, CNC sheet metal chassis, and printed circuit board is fabricated inside our own vertically integrated US factory. This complete design control guarantees component-level traceability.
While European and Asian suppliers often quote 20 to 30-week lead times for custom high-power DC systems, our vertically integrated workflow allows us to deliver fully configured, made-to-order test systems to Swiss ports within 4 to 6 weeks.
Standardized SCPI syntax across all power ranges—from 1.5 kW bench units to multi-megawatt water-cooled cabinets. Automated Python, LabVIEW, and IVI driver suites ensure code written in Zurich R&D scales directly to production lines in St. Gallen.
Direct responses addressing technical integration, customs, calibration, and support across cantons.
Navigating complex GaN characterization, dynamic dynamic $R_{DS(\text{on})}$ testing, or high-power battery emulation requirements in Switzerland? Speak directly with our engineering team for customized hardware sizing, SCPI automation guidance, and fast formal quotations.