Explore our custom OEM test platforms optimized for semiconductor I-V characterization, BMS hardware-in-the-loop (HIL) validation, and precision electrochemical laboratory testing.
Addressing the measurement physics of SiC/GaN wide-bandgap semiconductors, ultra-fast dynamic transient responses, and high-density multi-channel BMS hardware-in-the-loop (HIL) validation.
Traditional curve tracers and battery simulators rely heavily on voltage-fed switch-mode architectures with massive output capacitance filter banks. While effective for static steady-state characterization, voltage-fed systems suffer from slow transient discharge speeds, high stored energy at output terminals, and catastrophic arc damage during breakdown testing ($V_{(BR)DSS}$).
Our engineered Current-Fed Topology integrates an energy-storing inductor directly on the primary DC link. This inherent inductive current limitation provides continuous short-circuit immunity, rapid dynamic recovery under microsecond pulsed loads, and zero output surge current. When tracing semiconductor breakdown voltage or simulating cell internal resistance ($R_i$) under fault conditions, current-fed topology prevents DUT thermal destruction while preserving nanosecond voltage response.
Modern electric vehicle (EV) powertrains and microgrid storage systems generate high-frequency back-EMF, regenerative current pulses, and sub-millisecond step loads. Standard programmable power sources operate strictly in Quadrant I (sourcing current). In contrast, specialized curve tracers and battery cell simulators demand true four-quadrant bipolar capability.
By pairing high-bandwidth linear MOSFET power stages with high-speed field-programmable gate array (FPGA) control loops, our custom OEM units achieve seamlessly continuous transitions between sourcing current (+) and sinking current (-) with transient recovery times under 10 microseconds. This enables precise simulation of battery cell balancing, instantaneous regenerative braking pulses, and dynamic impedance sweeps across diverse state-of-charge (SOC) parameters.
| Architecture Class | Dynamic Response | Voltage / Current Range | Energy Storage Topology | Primary Industrial Application |
|---|---|---|---|---|
| High-Voltage Dynamic Curve Tracer | < 5 µs Pulse Width | Up to 10,000 V / 1,000 A | Current-Fed Inductive Link | SiC / GaN Breakdown & $V_{GS(th)}$ Characterization |
| Multi-Channel BMS Cell Simulator | < 10 µs Step Sinking | 0–6 V / Cell (Up to 128 Ch) | Linear MOSFET Dual Quadrant | BMS HIL Validation, SOC Balance & Fault Injection |
| Megawatt Battery Simulator (150kW-1MW+) | < 1 ms Full Scale Transient | 150 V – 1500 V / Up to 3000 A | Hybrid Matrix Switch-Mode | EV Traction Inverter, DC Fast Charge & Microgrid Test |
| Coin Cell & Micro-Battery Simulator | Sub-Microamp Resolution | 0–5 V / 100 nA – 3 A | Ultra-Low Noise Linear Stage | Electrochemical Lab, Medical Wearables & IoT Testing |
Full design control from raw sheet metal fabrication and precision magnetics winding to advanced PCB SMT assembly and 100% full-power thermal burn-in.
We do not rebrand third-party subassemblies. Every chassis, high-frequency transformer, control board, and firmware code is designed and fabricated within our vertically integrated facilities.
Standardized SCPI commands, Python API bindings, NI LabVIEW drivers, and Ethernet LXI/Modbus interfaces across all power levels—from 1U bench modules to megawatt systems.
Every custom instrument undergoes strict high-temperature stress testing and automated I-V calibration under maximum load conditions prior to global export packaging.
By controlling core raw magnetic components and sheet metal stamping, we eliminate supply chain bottlenecks, consistently shipping tailored OEM solutions in weeks rather than months.
Key technological shifts driving global R&D purchasing decisions across semiconductor fabs, automotive OEMs, and energy storage manufacturers.
As SiC and GaN devices push switching frequencies beyond hundreds of kilohertz, static curve tracing is no longer sufficient. Procurement teams are prioritizing dynamic pulse curve tracers capable of sub-microsecond voltage sweeps up to 10 kV while capturing high-temperature leakage current ($I_{DSS}$) and dynamic $R_{DS(on)}$ degradation in real time.
Modern battery management systems (BMS) require testing against hundreds of isolated cells concurrently. Enterprise buyers are moving away from single-channel bench supplies toward modular 24-channel to 128-channel cell simulators featuring millivolt-level accuracy, fault injection capabilities (open wire, short circuit), and active cell balancing simulation.
Advanced battery simulators are incorporating real-time mathematical models (equivalent circuit modeling) to simulate State-of-Charge (SOC), State-of-Health (SOH), internal impedance ($R_i$), and temperature dependencies. This allows automotive engineers to test traction controllers without risking live battery pack thermal runaway events.
Common questions answered by our chief power system architects regarding OEM customization, exporting protocols, and system integration.
Contact our senior power electronics design team today to discuss your exact voltage, current, dynamic slew rate, channel density, and custom OEM chassis requirement.