Explore our CE-marked, ISO 9001-compliant test instruments engineered for powder resistivity, wafer probing, hardness sclerometry, and die-attach shear strength.
Advanced non-destructive acoustic and structural integrity assessment tool featuring real-time signal analysis, multi-channel data collection, and robust CE/RoHS compliance.
High-precision micro-pitch dual-head spring probe featuring ultra-low contact resistance, gold-plated alloy contacts, and thermal stability for SiC wafer and BGA testing.
High-accuracy four-probe powder electrical resistivity measurement meter engineered specifically for evaluating raw SiC powder purity and ceramic substrate precursor conductivity.
Ultra-hard HRC 85 tungsten carbide die shear testing blades and modular fixtures designed for high-stress adhesion characterization of wide-bandgap power semiconductor dies.
Fully automated micro-hardness sclerometer equipped with digital imaging optics, HV/HK scale conversion, and touch-panel software for analyzing SiC wafer structural toughness.
Field-proven chemical reaction gas pressure moisture analyzer delivering rapid quantitative water content verification for raw mineral and carbide material processing.
Original high-reliability industrial automation meter module designed for process control systems, cleanroom environment monitoring, and automated test bench integration.
Ultra-fine pitch gold-plated dual-head pogo contact pin designed for repeatable high-density wafer probing, minimal contact wear, and sub-milliohm DC electrical measurements.
An in-depth technical analysis on material characterization, electrical parameterization, and quality verification across the global SiC supply chain.
The global shift toward high-efficiency electric vehicles (EVs), 800V powertrain architectures, renewable energy inverters, and industrial traction systems has accelerated the migration from conventional Silicon (Si) power devices to Silicon Carbide (SiC) Wide-Bandgap (WBG) semiconductors. Silicon Carbide possesses critical physical advantages: a bandgap energy of ~3.26 eV (compared to 1.12 eV for Si), a critical electric breakdown field strength nearly ten times higher (~3.0 MV/cm vs 0.3 MV/cm), and a thermal conductivity of 4.9 W/cm·K (exceeding copper at room temperature).
However, these extreme physical properties introduce profound challenges during wafer fabrication, crystal growth, powder preparation, and device packaging. Because 4H-SiC exhibits extreme lattice hardness (Mohs scale ~9.5, second only to diamond), traditional mechanical testing, micro-hardness verification, and wafer contact probing require ultra-durable instrumentation. Conventional test probes and shear blades suffer rapid abrasion, leading to contact resistance instability, false yield failures, and excessive downtime. As a premier CE certified SiC tester manufacturer and exporter, our metrology platform is specifically built with hardened alloy tooling, low-drift measurement circuits, and high-frequency shielding to meet the demanding conditions of SiC processing.
Prior to ingot growth via Physical Vapor Transport (PVT), raw SiC powder precursor purity must be verified. Small variations in stoichiometry or trace metallic impurities alter electrical resistivity, triggering stacking faults and micropipe defects in the grown crystal boule.
Characterizing SiC wafers prior to dicing requires high-durability probing solutions capable of delivering ultra-low contact resistance across thousands of touchdowns at elevated temperatures (up to 200°C).
Why leading semiconductor foundries, ATE integrators, and packaging facilities rely on our engineered test solutions.
Our state-of-the-art manufacturing facility brings together electrical design, precision mechanical machining, custom magnetics winding, Surface Mount Technology (SMT) PCB assembly, and environmental stress screening under one roof. This vertical integration allows us to enforce strict quality control standards at every stage of production, ensuring rapid customization lead times of 4 to 6 weeks for specialized SiC test equipment.
Every tester leaving our facility carries full CE certification, complying with European Low Voltage Directive (LVD 2014/35/EU) and Electromagnetic Compatibility (EMC 2014/30/EU) standards. Furthermore, strict adherence to RoHS 3 (Directive 2015/863) guarantees that lead, cadmium, mercury, and polybrominated diphenyl ethers are completely restricted from our sub-assemblies.
Unlike standard off-the-shelf test gear, 100% of our SiC testing instruments undergo rigorous full-power thermal burn-in and extended high-stress cycle testing. Calibration certificates are directly traceable to international metrology standards (NIST / ISO/IEC 17025), assuring global buyers of immediate turn-key deployment upon arrival.
Strategic insights for procurement directors, test engineers, and supply chain managers planning next-generation wafer fab equipment investments.
The global semiconductor industry is rapidly migrating from 150mm (6-inch) to 200mm (8-inch) SiC wafer substrates to increase die yield per wafer by over 75%. This shift demands probing instruments with enhanced mechanical rigidity, larger stage travel precision, and lower parasitic inductance. Procurement teams are prioritizing test pin contacts (such as gold-plated dual-head pogo pins) capable of handling micro-pitch pitch configurations without compromising signal integrity under 1200V+ bias voltages.
Static DC parametric testing alone is no longer sufficient to guarantee SiC MOSFET reliability. Future procurement specifications require automated integration of Dynamic Double-Pulse Testing (DPT) to capture ultra-fast switching transients ($di/dt > 10\,\text{kA}/\mu\text{s}$, $dv/dt > 100\,\text{V}/\text{ns}$). Test systems must incorporate ultra-low ripple DC power buses, fast-response blocking diodes, and low-inductance load fixtures to prevent inductive ringing during breakdown evaluation.
To reduce scrap rates in SiC crystal growth, fabs are replacing manual offline powder and substrate inspection with automated inline metrology. High-speed powder resistivity meters (e.g., ST2742B) and digital Vickers hardness sclerometers equipped with optical image analysis and PC-link software control enable real-time Statistical Process Control (SPC), catching material defects before expensive epitaxy deposition processes begin.
High-power SiC modules operate at junction temperatures exceeding 175°C to 200°C. Standard solder joints fail rapidly due to thermal fatigue, prompting widespread adoption of copper or silver sintering. Consequently, shear testing fixtures with ultra-hard HRC 85 carbide blades are becoming mandatory in packaging quality assurance labs to measure shear stress limits up to 100 MPa.
Compare key metrology capabilities across our certified product portfolio to select the optimal instrumentation for your test bay.
| Equipment Category | Key Model / Part | Primary Measurement Parameters | Standards Compliance | Target SiC Application |
|---|---|---|---|---|
| Powder Electrical Metrology | ST2742B Meter | Resistivity ($\Omega\cdot\text{cm}$), Volumetric Conductivity, Powder Density | CE, RoHS, ISO 9001 | Raw SiC Powder, Ceramic Precursor QA |
| Wafer Probing & Interconnects | CYXS 015AP / CY099A | Contact Resistance ($< 30\,\text{m}\Omega$), High-Temp Current Conduction | CE, RoHS, REACH | SiC Wafer Parametric Probing, BGA, ATE Racks |
| Die Bonding Integrity | Rhesca Series HRC 85 Tooling | Die Shear Strength (Kgf/mm²), Delamination Stress, Adhesion | CE Certified Fixtures | SiC Power Module Packaging, Silver Sintering |
| Substrate Mechanical Testing | Automatic Vickers Sclerometer | HV / HK Hardness Scale, Fracture Toughness, Micro-indentation | CE (EN 61010-1), ISO 6507 | SiC Wafer Substrate & Ceramic Disk Hardness |
| Acoustic & Structural Integrity | P800 Smart Tester | Real-time Waveform Analysis, Signal Processing, Sound Speed | CE, RoHS Building Quality | Substrate Integrity & Structural Base Checking |
Technical, regulatory, and trade information for international buyers purchasing SiC test equipment.
All exported test equipment ships with an official Manufacturer Declaration of Conformity (DoC) detailing compliance with relevant European Directives (EMC Directive 2014/30/EU and Low Voltage Directive 2014/35/EU). Additionally, comprehensive RoHS 3 material safety datasheets and factory calibration certificates traceable to NIST standards are included with every delivery package.
Our CYXS and CY099A series probes utilize specialized beryllium copper (BeCu) or high-durability alloy springs plated with multi-layer heavy hard gold. This metallurgical structure prevents surface oxidation at temperatures up to 200°C, maintaining stable sub-milliohm contact resistance across over 500,000 insertion cycles.
Yes. Our touch-panel Automatic Vickers Hardness Testers feature built-in PC-Link software support with RS-232, USB, and Ethernet (TCP/IP) interfaces. They accept standard SCPI communication protocols and can easily interface with automated handler systems, LabVIEW environments, Python automation scripts, and factory Manufacturing Execution Systems (MES).
Because our manufacturing operates on a vertically integrated model—combining in-house CNC machining, tool fabrication, and SMT assembly—our standard made-to-order lead time is 4 to 6 weeks. Common spring probes, standard powder resistivity meters, and replacement die shear accessories are frequently maintained in warehouse stock for immediate dispatch.
Silicon carbide die attach processes increasingly utilize silver-sintering or high-lead eutectic solders, which produce bond shear strengths far exceeding traditional silicon dies. Standard hardened steel tools deform or dull rapidly under high lateral forces. Our HRC 85 micro-grain tungsten carbide tooling delivers high wear resistance, preventing blade deflection and ensuring accurate shear force measurements up to 100 Kgf.
The ST2742B integrates a precision hydraulic pressing mechanism with digital height sensors. By measuring electrical resistance under tightly controlled, repeatable pressure values (MPa), the system eliminates measurement variation caused by loose powder packing density, providing true bulk resistivity data for quality control.
Whether you require customized wafer probe pins, high-accuracy powder resistivity meters, or CE-marked hardness sclerometers, our technical team is ready to evaluate your test specifications and provide factory-direct pricing within 24 hours.